Main Product Characteristics:
VDSS
600V
RDS(on) 2ohm(typ. )
ID 4A
Features and Benefits:
TO220F
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF5N60F
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for ...
SSF5N60F PDF File
