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MMBD2835

JR
Part Number MMBD2835
Manufacturer JR
Description Silicon Epitaxial Planar Switching Diode
Published Jun 23, 2017
Detailed Description Silicon Epitaxial Planar Switching Diode MMBD2835, MMBD2836 Features • Small package • Low forward voltage • Fast reve...
Datasheet PDF File MMBD2835 PDF File

MMBD2835
MMBD2835


Overview
Silicon Epitaxial Planar Switching Diode MMBD2835, MMBD2836 Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Range 3 12 Marking Code: A1 SOT-23 Plastic Package MMBD2835 MMBD2836 Symbol VR IF Ptot Tj Tstg Value 35 75 100 350 150 - 55 to + 150 Unit V mA mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 50 mA at IF = 100 mA Reverse Current at VR = 30 V at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA D...



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