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2N916

Part Number	2N916
Manufacturer	Motorola
Description	NPN silicon annular transistor
Published	Jun 14, 2017
Detailed Description	2N916 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipa...
Datasheet	2N916 PDF File

Overview

2N916 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (S Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO Pd Pd TJ- Tstg Value 25 45 5 0.
36 2.
06 1.
2 6.
9 - 65 to + 200 Unit Vdc Vdc Vdc Watts mWVC Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltaged) Oc = 30 mA, Ib = 0) Collector-Base Breakdown Voltage Oc = 10 mA, Ie = 0) Emitter-Base Breakdown Voltage (Ie = 10 fjA, lc = 0) Collector Cutoff Current (Vqb = 30 V, lg = 0) C...

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