Silicon Power Schottky Diode - GeneSiC
Description
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 30 V to 40V VRRM • Not ESD Sensitive
Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N6095 thru 1N6096R
VRRM = 30 V - 40 V IF = 25 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N6095 (R)
1N6096 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 100 °C TC = 25 °C, tp = 8.
3 ms
30 21 30 25
400
-55 to 150 -55 to 150
40 28 40 25
400
-55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N6095 (R)
Diode forward voltage
Reverse current
Thermal characteristics Thermal resistance, junction case
VF IF = ...
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