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BC560C

Part Number	BC560C
Manufacturer	ON Semiconductor
Description	PNP Epitaxial Silicon Transistor
Published	May 14, 2017
Detailed Description	PNP Epitaxial Silicon Transistor BC556, BC557, BC558, BC559, BC560 Features • Switching and Amplifier • High−Voltage: B...
Datasheet	BC560C PDF File

Overview

PNP Epitaxial Silicon Transistor BC556, BC557, BC558, BC559, BC560 Features • Switching and Amplifier • High−Voltage: BC556, VCEO = −65 V • Low−Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector - Base Voltage VCBO V BC556 −80 BC557 / BC560 −50 BC558 / BC559 −30 Collector - Emitter Voltage VCEO V BC556 −65 BC557 / BC560 −45 BC558 / BC559 −30 Emitter - Base Voltage VEBO −5 V Collector Current (DC) IC −100 mA Peak Collector Current (Pulse) ICP −200 mA Peak Base Current (Pulse) IBP −200 mA Junction Temperature TJ 150 °C Storage Temperature Range TSTG −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reli...

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