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2N5829

Motorola
Part Number 2N5829
Manufacturer Motorola
Description HIGH FREQUENCY TRANSISTOR
Published May 8, 2017
Detailed Description 2N4957 2N4958 2N4959 2N5829 2N4957 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSIS...
Datasheet PDF File 2N5829 PDF File

2N5829
2N5829

Overview
2N4957 2N4958 2N4959 2N5829 2N4957 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO vCBO v EBO ic PD TJ' Tstg Value 30 30 3.
0 30 200 1.
14 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted] Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 1.
0 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 100 ^Adc, l£ = 0) Emitter-Base Breakdown Voltage (IE = 100 ^Adc, cl = 0) Collector Cutoff Current (VCB = 10 Vdc, El = 0) (Vcb = 10 Vdc, Ie = 0, TA = 150°C) ON CHARACTERISTICS DC Current Gain dC = 2.
0 mAdc, VC E = 10 Vdc) SMALL SIGNAL CHARACTERISTICS —Current-Gain Bandwidth Product! 1) (IE = 2.
0 mAdc, V C E = 1...


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