Monolithic Dual Switching Diode Common Cathode - ON Semiconductor
Description
Monolithic Dual Switching Diode Common Cathode
BAV70DXV6, NSVBAV70DXV6
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS
VR
100
IF
200
IFM(surge)
500
Vdc mAdc mAdc
Characteristic (One Junction Heated)
Symbol Max
Unit
Total Device Dissipation, TA = 25°C Derate above 25°C
PD
357
mW
(Note 1)
2.
9
mW/°C
(Note 1)
Thermal Resistance, Junction-to-Ambient
RqJA
350
°C/W
(Note 1)
Characteristic (Both Junctions Heated)
Symbol Max
Unit
Total Device Dissipation, TA = 25°C Derate above 25°C
PD
500
mW
(Note 1)
4.
0
mW/°C
(Note 1)
Thermal Resistance, Junction-to-Ambient
RqJA
250
°C/W
(Note 1)
Junction and Storage Temperature Range
TJ, Tstg − 55 to
°C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
FR−4 @ Minimum Pad
DATA SHEET www.
onsemi.
com
6 CATHODE
5 ANODE
4 ANODE
ANODE 1 2 ANODE
3 CATHODE
BAV70DXV6T1
SOT−563 CASE 463A 1
MARKING DIAGRAM
A4 M G G
1
A4 = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
BAV70DXV6T1G
SOT−563 4000 / Tape &
(Pb−Free)
Reel
BAV70DXV6T5G
SOT−563 8000 / Tape &
(Pb−Free)
Reel
NSVBAV70DXV6T5G SOT−563 8000 / Tape &
(Pb−Free)
Reel
NSVBAV70DXV6T1G SOT−563 4000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
April, 2022 −...
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