DatasheetsPDF.com

WSB5558N

WillSEMI
Part Number WSB5558N
Manufacturer WillSEMI
Description Schottky Barrier Diode
Published Apr 30, 2017
Detailed Description WSB5558N Schottky Barrier Diode Features  100mA Average rectified forward current  Low forward voltage  Low leakage c...
Datasheet PDF File WSB5558N PDF File

WSB5558N
WSB5558N

Overview
WSB5558N Schottky Barrier Diode Features  100mA Average rectified forward current  Low forward voltage  Low leakage current  Small package DFN1006-2L Applications  Low Current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current (8.
3ms single sine pluse) Junction temperature Operating temperature Storage temperature WSB5558N Http://www.
sh-willsemi.
com DFN1006-2L Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 30 30 100 1 150 -40 ~ 125 -40 ~ 150 Unit V V mA A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Reverse Voltage Forward Vo...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)