DatasheetsPDF.com

WSB5556Z

WillSEMI
Part Number WSB5556Z
Manufacturer WillSEMI
Description Schottky Barrier Diode
Published Apr 30, 2017
Detailed Description WSB5556Z Schottky Barrier Diode Features  100mA Average rectified forward current  Low forward voltage  Low leakage c...
Datasheet PDF File WSB5556Z PDF File

WSB5556Z
WSB5556Z

Overview
WSB5556Z Schottky Barrier Diode Features  100mA Average rectified forward current  Low forward voltage  Low leakage current  Small package DFN0603-2L Applications  Low Current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current (8.
3ms single sine pluse) Junction temperature Operating temperature Storage temperature WSB5556Z Http://www.
sh-willsemi.
com DFN0603-2L(Bottom View) Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 30 30 100 2 150 -40 ~ 150 -40 ~ 150 Unit V V mA A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Reverse Volta...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)