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WPMD2010

Part Number	WPMD2010
Manufacturer	WillSEMI
Description	MOSFET
Published	Apr 30, 2017
Detailed Description	WPMD2010 Dual P-Channel, -20 V, -3.6A, Power MOSFET Description The WPMD2010 uses advanced trench technology and design...
Datasheet	WPMD2010 PDF File

Overview

WPMD2010 Dual P-Channel, -20 V, -3.
6A, Power MOSFET Description The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion applications.
Standard Product WPMD2010 is Pb-free.
Features V(BR)DSS −20 V RDS(on) Typ 75mΩ@ −4.
5V 101mΩ@ −2.
5V z Lower RDS(on) Solution in 2x2 mm Package z 1.
8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.
8 mm) for Easy Fit in Thin Environments z Bidirectional Current Flow with Common Source Configuration z DFN6 Package Provides Exposed Drain Pad for Excellent Thermal Conduction Application z Optimized for Battery and Load M...

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