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WNM6001

Will Semiconductor
Part Number WNM6001
Manufacturer Will Semiconductor
Description N-Channel MOSFET
Published Apr 30, 2017
Detailed Description WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:200...
Datasheet PDF File WNM6001 PDF File

WNM6001
WNM6001

Overview
WNM6001 Single N-Channel, 60V, 0.
50A, Power MOSFET VDS (V) Rds(on) (Ω) 1.
4@ VGS=10V 60 1.
7@ VGS=4.
5V ESD Rating:2000V HBM Descriptions The WNM6001 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM6001 is Pb-free and Halogen-free.
WNM6001 Http//:www.
sh-willsemi.
com SOT-23 D 3 12 GS Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23 Applications  Driver for Relay, ...


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