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WNMD6003

Will Semiconductor
Part Number WNMD6003
Manufacturer Will Semiconductor
Description Dual N-Channel MOSFET
Published Apr 30, 2017
Detailed Description WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000...
Datasheet PDF File WNMD6003 PDF File

WNMD6003
WNMD6003

Overview
WNMD6003 Dual N-Channel, 60V, 0.
30A, Power MOSFET VDS (V) Rds(on) (Ω) 1.
4@ VGS=10V 60 1.
7@ VGS=4.
5V ESD Rating:2000V HBM Descriptions The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD6003 is Pb-free and Halogen-free.
WNMD6003 Http//:www.
sh-willsemi.
com SOT-563 D1 G2 S2 6 54 1 23 S1 G1 D2 Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-563 Appl...


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