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WNMD3014

Will Semiconductor
Part Number WNMD3014
Manufacturer Will Semiconductor
Description Dual N-Channel MOSFET
Published Apr 30, 2017
Detailed Description WNMD3014 Dual N-Channel, 30V, 6.8A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.023@ VGS=10V 0.033@ VGS=4.5V WNMD3014 Http...
Datasheet PDF File WNMD3014 PDF File

WNMD3014
WNMD3014

Overview
WNMD3014 Dual N-Channel, 30V, 6.
8A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.
023@ VGS=10V 0.
033@ VGS=4.
5V WNMD3014 Http//:www.
willsemi.
com Descriptions The WNMD3014 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD3014 is Pb-free and Halogen-free.
Features SOP-8L D1 D1 D2 D2 8 76 5 1 234 S1 G1 S2 G2 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L Applications z Driver for R...


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