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WNMD2171

Part Number	WNMD2171
Manufacturer	Will Semiconductor
Description	Dual N-Channel MOSFET
Published	Apr 30, 2017
Detailed Description	WNMD2171 Dual N-Channel, 20V, 6A, Power MOSFET Vsss (V) Typ Rss(on) (mΩ) 36@ VGS=4.5V 38@ VGS=4.0V 20 41@ VGS=3.1V ...
Datasheet	WNMD2171 PDF File

Overview

WNMD2171 Dual N-Channel, 20V, 6A, Power MOSFET Vsss (V) Typ Rss(on) (mΩ) 36@ VGS=4.
5V 38@ VGS=4.
0V 20 41@ VGS=3.
1V 43@ VGS=2.
5V ESD Rating:2000V HBM Descriptions The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected.
Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge.
This device is designed for Lithium-Ion battery protection circuit.
The WNMD2171 is available in CSP-4L package.
Standard Product WNMD2171 is Pb-free and Halogen-free.
Features  Trench Technology  Supper high density cell...

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