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WNMD2166

Part Number	WNMD2166
Manufacturer	Will Semiconductor
Description	Dual N-Channel MOSFET
Published	Apr 30, 2017
Detailed Description	WNMD2166 Dual N-Channel, 20V, 4.0A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.022@ VGS=4.5V 0.024@ VGS=3.1V 0.027@ VGS=2....
Datasheet	WNMD2166 PDF File

Overview

WNMD2166 Dual N-Channel, 20V, 4.
0A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.
022@ VGS=4.
5V 0.
024@ VGS=3.
1V 0.
027@ VGS=2.
5V ID (A) 4.
0 2.
5 2.
0 WNMD2166 Http//:www.
willsemi.
com Descriptions The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2166 is Pb-free.
Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23-6L Applications  Driver for Relay, Solenoid, Motor, ...

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