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WNMD2162

Part Number	WNMD2162
Manufacturer	Will Semiconductor
Description	Dual N-Channel MOSFET
Published	Apr 30, 2017
Detailed Description	WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.8A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.016@ V...
Datasheet	WNMD2162 PDF File

Overview

WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.
8A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.
016@ VGS=4.
5V 0.
019@ VGS=3.
1V 0.
022@ VGS=2.
5V The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2162 is Pb-free and Halogenfree .
Http//:www.
willsemi.
com PDFN2.
9×2.
8-8L D2 D2 87 D1 6 D1 5 Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package PDFN...

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