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WNMD2160

Part Number	WNMD2160
Manufacturer	Will Semiconductor
Description	Dual N-Channel MOSFET
Published	Apr 30, 2017
Detailed Description	WNMD2160 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.0157@ VGS=4.5V 0.018@ VGS=3.1V 20 0.020@ VGS...
Datasheet	WNMD2160 PDF File

Overview

WNMD2160 Dual N-Channel, 20V, 6.
3A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.
0157@ VGS=4.
5V 0.
018@ VGS=3.
1V 20 0.
020@ VGS=2.
5V ESD Rating: 2000V HBM WNMD2160 Http//:www.
willsemi.
com Descriptions The WNMD2160 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2160 is Pb-free.
Features SOT-23-6L G1 D1/D2 G2 654 1 23 S1 D1/D2 S2 Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Volt...

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