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WNMD2158

Part Number	WNMD2158
Manufacturer	Will Semiconductor
Description	Dual N-Channel MOSFET
Published	Apr 30, 2017
Detailed Description	WNMD2158 Dual N-Channel, 20V, 7.0A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.0148@ VGS=4.5V 0.017@ VGS=3.1V 20 0.019@ VGS...
Datasheet	WNMD2158 PDF File

Overview

WNMD2158 Dual N-Channel, 20V, 7.
0A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.
0148@ VGS=4.
5V 0.
017@ VGS=3.
1V 20 0.
019@ VGS=2.
5V ESD Rating: 2000V HBM WNMD2158 www.
sh-willsemi.
com Descriptions TSSOP-8L D1/D2 S2 S2 G2 8765 The WNMD2158 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2158 is Pb-free.
Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package TSSOP-8L 1234 D1/D2 S1 S1...

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