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WNMD2157

Part Number	WNMD2157
Manufacturer	Will Semiconductor
Description	Dual N-Channel MOSFET
Published	Apr 30, 2017
Detailed Description	WNMD2157 Dual N-Channel, 20V, 5.4A, Power MOSFET VDS (V) 20 Rds(on) (ȍ) 0.019@ VGS=4.5V 0.024@ VGS=2.5V 0.034@ VGS=1....
Datasheet	WNMD2157 PDF File

Overview

WNMD2157 Dual N-Channel, 20V, 5.
4A, Power MOSFET VDS (V) 20 Rds(on) (ȍ) 0.
019@ VGS=4.
5V 0.
024@ VGS=2.
5V 0.
034@ VGS=1.
8V WNMD2157 Http//:www.
willsemi.
com Descriptions Package The WNMD2157 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2157 is Pb-free and Halogen-free.
Features G1 D1/D2 65 G2 4 1 23 S1 D1/D2 S2 Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z ...

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