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WNMD2155

Part Number	WNMD2155
Manufacturer	Will Semiconductor
Description	Dual N-Channel MOSFET
Published	Apr 30, 2017
Detailed Description	WNMD2155 WNMD2155 Dual N-Channel, 20V, 7.9A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) (ȍ) 0.018@ VGS=1...
Datasheet	WNMD2155 PDF File

Overview

WNMD2155 WNMD2155 Dual N-Channel, 20V, 7.
9A, Power MOSFET Http//:www.
willsemi.
com VDS (V) Rds(on) (ȍ) 0.
018@ VGS=10V 0.
020@ VGS=4.
5V 20 0.
025@ VGS=2.
5V 0.
031@ VGS=1.
8V Descriptions The WNMD2155 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2155 is Pb-free.
SOP-8L D1 D1 D2 8 76 D2 5 Features z Trench Technology 1 234 S1 G1 S2 G2 Pin configuration (Top view) 8 7 65 z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Thresho...

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