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WNM4006

Will Semiconductor
Part Number WNM4006
Manufacturer Will Semiconductor
Description N-Channel MOSFET
Published Apr 30, 2017
Detailed Description WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) 45 Rds(on) (ȍ) 0.126@ VGS=10V 0.142@ VGS=4.5V 0.147@ VGS=4....
Datasheet PDF File WNM4006 PDF File

WNM4006
WNM4006

Overview
WNM4006 Single N-Channel, 45V, 1.
7A, Power MOSFET VDS (V) 45 Rds(on) (ȍ) 0.
126@ VGS=10V 0.
142@ VGS=4.
5V 0.
147@ VGS=4.
0V 0.
208@ VGS=2.
5V Descriptions The WNM4006 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM4006 is Pb-free.
Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WNM4006 Http//:www.
willsemi.
com SOT-23 D 3 12 GS Pin configuration (Top view) W46* W46 ...


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