P-Channel Power MOSFET - ON Semiconductor
Description
Ordering number : ENA1604A
ATP108
P-Channel Power MOSFET
–40V, –70A, 10.
4mΩ, Single ATPAK
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Features
• Low ON-resistance • Slim package • Halogen free compliance
• Large current • 4.
5V drive • Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--15V, L=100μH, IAV=--35A *2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings --40 ±20 --70
--210 60
150 --55 to +150
95 --35
Unit V V A A W °C °C mJ A
Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses...
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