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CBCP69

Central Semiconductor Corp
Part Number CBCP69
Manufacturer Central Semiconductor Corp
Description SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS
Published Mar 23, 2005
Detailed Description CBCP68 NPN CBCP69 PNP SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS Central Semiconductor DESCRIPTION: TM Corp. The...
Datasheet PDF File CBCP69 PDF File

CBCP69
CBCP69


Overview
CBCP68 NPN CBCP69 PNP SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS Central Semiconductor DESCRIPTION: TM Corp.
The CENTRAL SEMICONDUCTOR CBCP68, CBCP69 types are complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.
SOT-223 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCES VCEO VEBO IC ICM IB IBM PD TJ,Tstg QJA UNITS V V V A A mA mA W oC oC/W Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current-Peak Base Current Base Current-Peak Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 25 20 5.
0 1.
0 2.
0 100 200 2.
0 -65 to +150 62.
5 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) VBE(ON) hFE TEST CONDITIONS VCB=25V VCB=25V, TA=150oC VEB=5.
0V IC=10mA IC=10mA IE=1.
0mA IC=1.
0A, IB=100mA VCE=10V, IC=5.
0mA VCE=1.
0V, IC=1.
0A VCE=10V, IC=5.
0mA MIN TYP MAX 10 1.
0 10 UNITS mA mA mA V V V V V V 25 20 5.
0 0.
5 0.
6 1.
0 50 66 SYMBOL hFE hFE fT Cob TEST CONDITIONS VCE=1.
0V, IC=500mA VCE=1.
0V, IC=1.
0A VCE=5.
0V, IC=10mA, f=20MHz VCB=5.
0V, IE=0, F=450kHz MIN 85 60 65 TYP MAX 375 UNITS 25 MHz pF All dimensions in inches (mm).
LEAD CODE: 1) 2) 3) 4) BASE COLLECTOR EMITTER COLLECTOR R2 67 ...


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