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EMB12P03A

Excelliance MOS
Part Number EMB12P03A
Manufacturer Excelliance MOS
Description MOSFET
Published Apr 26, 2017
Detailed Description P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 12mΩ ID...
Datasheet PDF File EMB12P03A PDF File

EMB12P03A
EMB12P03A

Overview
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.
) 12mΩ ID ‐45A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.
1mH, ID=‐25A, RG=25Ω L = 0.
05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature.
2Duty cycle  1％ TYPICAL EMB12P03A LIMITS ±20 ‐45 ‐32 ‐90 ‐25 31.
25 15.
6 50 20 ‐55 to 150 UNIT V A mJ W °C MAXIMUM 2.
5 62.
5 UNIT °C / W 2013/6/21 p.
1 EMB12P03A ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise...


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