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SW13N50B

SEMIPOWER
Part Number SW13N50B
Manufacturer SEMIPOWER
Description MOSFET
Published Apr 20, 2017
Detailed Description SAMWIN SW13N50B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.52Ω)@VGS=10V ■ Gate Charge (Typi...
Datasheet PDF File SW13N50B PDF File

SW13N50B
SW13N50B

Overview
SAMWIN SW13N50B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.
52Ω)@VGS=10V ■ Gate Charge (Typical 29nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
BVDSS : 500V ID : 13A RDS(ON) : 0.
52ohm 2 1 3 O...


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