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SW22N60U

SEMIPOWER
Part Number SW22N60U
Manufacturer SEMIPOWER
Description MOSFET
Published Apr 20, 2017
Detailed Description SAMWIN SW22N60U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.35Ω)@VGS=10V ■ Gate Charge (Typ 12...
Datasheet PDF File SW22N60U PDF File

SW22N60U
SW22N60U

Overview
SAMWIN SW22N60U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.
35Ω)@VGS=10V ■ Gate Charge (Typ 124 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P 12 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
BVDSS : 600V ID : 22A RDS(ON) : 0.
35Ω 2 1 3 Order Code...


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