DatasheetsPDF.com

SW50N06T

SEMIPOWER
Part Number SW50N06T
Manufacturer SEMIPOWER
Description MOSFET
Published Apr 20, 2017
Detailed Description SAMWIN SW50N06T N-channel D-PAK/TO-220 MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16.8mΩ)@VGS=10V ■ Gate Charge...
Datasheet PDF File SW50N06T PDF File

SW50N06T
SW50N06T

Overview
SAMWIN SW50N06T N-channel D-PAK/TO-220 MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16.
8mΩ)@VGS=10V ■ Gate Charge (Typ 41nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-252 TO-220 1 2 3 12 3 BVDSS : 60V ID : 50A RDS(ON) : 16.
8mΩ 2 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appl...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)