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SW1N55D

SEMIPOWER
Part Number SW1N55D
Manufacturer SEMIPOWER
Description MOSFET
Published Apr 20, 2017
Detailed Description SAMWIN SW1N55D N-channel IPAK MOSFET Features TO-251 ■ High ruggedness ■ RDS(ON) (Max6.5Ω)@VGS=10V ■ Gate Charge (T...
Datasheet PDF File SW1N55D PDF File

SW1N55D
SW1N55D

Overview
SAMWIN SW1N55D N-channel IPAK MOSFET Features TO-251 ■ High ruggedness ■ RDS(ON) (Max6.
5Ω)@VGS=10V ■ Gate Charge (Typical 7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 550V ID : 1A RDS(ON) :6.
5Ω 2 1 3 Order Codes Item 1 Sales Type SW I 1N55 Marking SW1N55...


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