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BF912N60

BYD
Part Number BF912N60
Manufacturer BYD
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description BYD Microelectronics Co., Ltd. BF912N60/ BF912N60L 600V N-Channel MOSFET General Description These N-Channel enhanceme...
Datasheet PDF File BF912N60 PDF File

BF912N60
BF912N60

Overview
BYD Microelectronics Co.
, Ltd.
BF912N60/ BF912N60L 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features z VDS =600 V z ID =12A z RDS(ON) =0.
5 Ω TYP(VGS=10V,ID=6.
0A) z Low CRSS (typical 17pF) z Fast switching Absolute Maximum Ratings...


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