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DG18N50

DGME
Part Number DG18N50
Manufacturer DGME
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Published Apr 12, 2017
Detailed Description DG18N50 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG18N50N，， ，，，。 ，，。 DG18N60 is an N-channel e...
Datasheet PDF File DG18N50 PDF File

DG18N50
DG18N50

Overview
DG18N50 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.
0 General Description DG18N50N，， ，，，。 ，，。 DG18N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 500 18 0.
26 25 V A Ω pF Symbol Package 1 /9 ABSOLUTE MAX...


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