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DG6N70

DGME
Part Number DG6N70
Manufacturer DGME
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Published Apr 12, 2017
Detailed Description DG6N70 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG6N70N，， ，，，。 ，，。 DG6N70 is an N-channel enha...
Datasheet PDF File DG6N70 PDF File

DG6N70
DG6N70

Overview
DG6N70 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.
0 General Description DG6N70N，， ，，，。 ，，。 DG6N70 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 700 6.
0 2.
3 14 V A Ω pF Symbol Package 1 /9 ABSOLUTE MAXIMU...


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