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RU6888M

Ruichips
Part Number RU6888M
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 10, 2017
Detailed Description RU6888M N-Channel Advanced Power MOSFET Features • 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design ...
Datasheet PDF File RU6888M PDF File

RU6888M
RU6888M

Overview
RU6888M N-Channel Advanced Power MOSFET Features • 60V/62A, RDS (ON) =7mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description PDFN5060 Applications • Power Management.
Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips Semiconductor Co.
, Ltd Rev.
A– DEC.
, 2011 N-Channel MOSFET TC=25°C TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C Rating Unit 60 ±25 150 -55 to 150 ① 50 V °C °C A ② 240 ① 62 40 ③ 16 ③ 13 62.
5 25 ③ 4.
2 ③ 2.
7 A A W www.
ruichips.
com ...


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