N-Channel Advanced Power MOSFET - Ruichips
Description
RU60E6H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/6A, RDS (ON) =31mΩ (Type) @ VGS=10V RDS (ON) =37mΩ (Type) @ VGS=4.
5V
• Super High Dense Cell Design
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
Pin Description
SOP-8
Applications
• Power Management.
• Switch Applications.
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TC=25°C
ID
PD
②
RθJA
Continuous Drain Current(VGS=10V)
TC=25°C TC=70°C
Maximum Power Dissipation
TC=25°C TC=70°C
Thermal Resistance-Junction to Ambient
Rating
60 ±20 150 -55 to 150
6
①
24 6
4.
6 2.
5 1.
6 50
Unit
V °C °C A
A A
W °C/W
Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
B– APR.
, 2011
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