RU30120M
N-Channel Advanced Power MOSFET
Features
• 30V/120A, RDS (ON) =2mΩ(Typ. )@VGS=10V RDS (ON) =2. 9mΩ(Typ. )@VGS=4. 5V
• Super High Dense Cell Design
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
PDFN5060
Applications
• DC/DC Conversion • Switching Application
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
Copyright Ruichips Semiconductor Co. , Ltd Rev. A– FEB. , 2012
N-Channel MOSFET
TC=25°C
TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C
Rating
Unit
30 ±20 150 -55 to 150
①
50
V
°C °C A
②
410
①
120
①
97...
RU30120M PDF File
