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RU30120L

Ruichips
Part Number RU30120L
Manufacturer Ruichips
Published Apr 10, 2017
Description N-Channel Advanced Power MOSFET
Detailed Description RU30120L N-Channel Advanced Power MOSFET MOSFET Features •
Datasheet PDF File RU30120L PDF File

RU30120L
RU30120L


Overview
RU30120L N-Channel Advanced Power MOSFET MOSFET Features • 30V/120A, RDS (ON) =2.
5mΩ (Typ.
) @ VGS=10V RDS (ON) =3.
3mΩ (Typ.
) @ VGS=4.
5V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC-DC Converters Pin Description TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– AUG.
, 2011 Rating 30 ±20 17...


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