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RU6888S

Ruichips
Part Number RU6888S
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 10, 2017
Detailed Description RU6888S N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resist...
Datasheet PDF File RU6888S PDF File

RU6888S
RU6888S

Overview
RU6888S N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.
) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Applications • Switching Application Systems • Inverter Systems Pin Description TO-263 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semico...


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