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MT30N03

Part Number	MT30N03
Manufacturer	MOS-TECH
Description	N-Channel Power MOSFET
Published	Apr 10, 2017
Detailed Description	MOS-TECH Semiconductor Co.,LTD MT30N03 N-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense...
Datasheet	MT30N03 PDF File

Overview

MOS-TECH Semiconductor Co.
,LTD MT30N03 N-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 30V 30A 11@ VGS=10V 17@ VGS=4.
5V NOTE：The MT50N03 is available in a lead-free package ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit 30 ±20 30 - Pulse d b IDM 90 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG 30 50 -55 to 175 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 50 ℃/W ©2007Mos-Tech Semiconductor 1 http//www.
mtsemi.
com Mos-Tech Semiconductor Co.
,LTD.
MT30N03 ELECTRICAL CHARACTERISTICS (TA=25℃ unless ...

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MT30N03 N-Channel Power MOSFET - MOS-TECH

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