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HY3610P

HOOYI
Part Number HY3610P
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Apr 6, 2017
Detailed Description HY3610P N-Channel Enhancement Mode MOSFET Features Pin Description • 100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V • 1...
Datasheet PDF File HY3610P PDF File

HY3610P
HY3610P

Overview
HY3610P N-Channel Enhancement Mode MOSFET Features Pin Description • 100V/160A RDS(ON) = 4.
5 mΩ (typ.
) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications • Switching application • Power Management for Inverter Systems.
G S N-Channel MOSFET Ordering and Marking Information P HY3610 YYÿ XXXJWW G Package Code P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
HOOYI lead-free products meet or exceed the lead-free requireme...


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