WBP3308
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very high switching speed ■ High Voltage Capability ■ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCBO VCEO VEBO IC ICP IB PC TJ TSTG
Collect-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Total Dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature
Test Conditions
VBE=0 IB=0 IC=0
(Note)
Value
900 500
7 7 14 3 45 150 -55~150
Units
V V V A A
W ℃ ℃
Thermal Characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to Case
Value
2. 78
Units
℃/W
Rev. A02 Jun. 2011
Copyright@Winsemi Microelectronics Co. , Ltd. , All right reserved.
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol
Parameter
Test conditi...
WBP3308 PDF File
