NPN Power Transistor - Winsemi
Description
WBP13007-K
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA
General Description
This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply.
B C E
TO220
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO VEBO IC ICP IB IBM
PC
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃
TJ Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling) Ta:Ambient temperature (without heat sink)
Test Conditions
VBE = 0 IB = 0 IC = 0
tP = 5ms
Value
700
400 9.
0 8.
0 16 4.
0 8.
0 80 2.
05 - 40 ~ 150
- 40 ~ 150
Units
V V V A A A A
W
℃ ℃
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case RθJA ...
Similar Datasheet
