WBP13005D1
High Voltage Fast-Switching NPN Power Transistor
Features ■ Very High Switching Speed ■ Minimum Lot-to-Lot hFE Variation ■ Wide Reverse Bias SOA ■ Built-in freewheeling diode
General Description
This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Paramete
VCES
Collector-Emitter Vroltage
VCEO VEBO IC ICP IB IBM
PC
TJ
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃
Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
VBE = 0 IB = 0 IC = 0
tP = 5ms
Value
700
400 9. 0 4. 0 8. 0 2. 0 4. 0 75 1. 8 - 40 ~ 150
- 40 ~ 150
Units
V
V V A A A A
W
℃ ℃
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistanc...
WBP13005D1 PDF File
