NPN Power Transistor - Winsemi
Description
WBP13005D
High Voltage Fast -Switching NPN Power Transistor
Features
� Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA � Built-in free wheeling diode
General Description
This Device is designed for high Voltage, High speed switching Characteristics required such as lighting system ,switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
ICP Collector pulse Current
IB Base Current
IBM Base peak Current
PC Total Dissipation
TJ Operation Junction Temperature
TSTG
Storage Temperature
Test conditions
VBE=0 IB=0 IC=0
tP=5ms
Value
700 400 9.
0
4 8 2 4 75 150 -55~150
Units
V V V A A A A W ℃ ℃
Thermal characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to Case
RӨJA
Thermal Resistance Junction to Ambient
Value
3.
12 8.
9
Units
℃/W ℃/W
Rev.
A Aug.
2011
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