NPN Power Transistor - Winsemi
Description
WBP13003D
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA ■ Built-in free wheeling diode
symbol
2.
Collector
1.
Base
3.
Em itter
General Description
This Device is designed for high Voltage ,High speed switching Characteristics required such as lighting system,switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
ICP Collector pulse Current
IB Base Current
IBM Base peak Current
Total Dissipation at Tc*=25℃ PC Total Dissipation at Ta*=25℃
TJ Operation Junction Temperature
TSTG
Storage Temperature
Test conditions
VBE=0 IB=0 IC=0
tP=5ms
Value
700 400 9.
0 1.
5 3.
0 0.
75 1.
5 40 1.
2 -40~150 -40~150
Units
V V V A A A A
W
℃ ℃
Tc :Case temperature (good cooling) Ta :Ambient temperature (without heat sink)
Thermal characteristics
Symbol
Parameter...
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