NPN Power Transistor - Winsemi
Description
WBP3306
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very high switching speed ■ High Voltage Capability ■ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCBO VCEO VEBO IC ICP PC TJ TSTG
Collect-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Total Dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature
Test Conditions
VBE=0 IB=0 IC=0
(Note)
Value
950 400 12
4 8 70 150 -65~150
Units
V V V A A W ℃ ℃
Thermal Characteristics
Symbol
Parameter
RӨJC RӨJA
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
Value
1.
8 62.
5
Units
℃/W ℃/W
Rev.
A03 Jun.
2011
Copyright@Winsemi Microelectronics Co.
, Ltd.
, All right reserved.
Electrical Characteristics (TC=25℃ unless otherwise ...
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