Surface Mount Trench MOS Barrier Schottky Rectifier - Vishay
Description
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vishay.
com
V4PAN50-M3
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 4.
0 A (TA = 125 °C) TJ max.
Package
4.
0 A 50 V 80 A 0.
46 V 150 °C DO-221BC (SMPA)
Diode variation
Single die
FEATURES • Very low profile - typical height of 0.
95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
MECHANICAL DATA Case: DO-221BC (SMPA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Ma...
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