P-Channel 20V (D-S) MOSFET - Vishay
Description
P-Channel 20 V (D-S) MOSFET
SiSS23DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.
0045 at VGS = - 4.
5 V
- 20 0.
0063 at VGS = - 2.
5 V
0.
0115 at VGS = - 1.
8 V
ID (A) - 50e - 50e - 50e
PowerPAK 1212-8S
Qg (Typ.
) 93 nC
3.
3 mm
3.
3 mm
S
S
1
2
S
3
G 4
0.
75 mm
D
8
D
7
D
6
D 5
Bottom View
Ordering Information: SiSS23DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK®
Package with Small Size and Low 0.
75 mm Profile
• 100 % Rg and UIS Tested • Material categorization: For definitions of compliance
please see www.
vishay.
com/doc?99912
APPLICATIONS
• Smart Phones, Tablet PCs, Mobile
Computing
- Battery Switch
- Load Switch
- Power Management
G
- Battery Management
S
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)...
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