Power MOSFET - Vishay
Description
www.
vishay.
com
SiHB21N60EF
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
at 25 °C () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
84 14 24 Single
D2PAK (TO-263)
0.
176 D
GD S
G
S N-Channel MOSFET
FEATURES • Fast body diode MOSFET using E series
technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
APPLICATIONS • Telecommunications
- Server and telecom power supplies • Lighting
- High intensity discharge (HID) - Light emitting diodes (LEDs) • Consumer and computing - ATX power supplies • Industrial - Welding - Battery chargers • Renewable energy - Solar (PV inverters) • Switch mode power suppliers (SMPS) • Applications using...
Similar Datasheet
