Power MOSFET - Vishay
Description
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vishay.
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SiHA12N60E
Vishay Siliconix
E Series Power MOSFET
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
() at 25 °C Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
58 6 13 Single
0.
38
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
FEATURES
• Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses
• Ultra low gate charge (Qg) • Avalanche energy rated (UIS)
Available
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
APPLICATIONS • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting • Consumer - Adaptors - Televisions - Game console • Computing - Adaptors - ATX power supply
Thin-Lead TO-220 FULLPAK SiHA12N60E-E3 SiHA12N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C) e
Pulsed drain current a Linear derating factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d
TJ = 125 °C
EAS PD TJ, Tstg
dV/dt
Soldering recommendations (peak temperature) c
for 10 s
Mounting torque
M3 screw
Notes
a.
Repetitive rating; pulse width limited by maximum junction temperature b.
VDD = 50 V, starting TJ = 25 °C, L = 11.
6 mH, Rg = 25 , IAS = 4.
5 A c.
1.
6 mm from case d.
ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C e.
Limited by maximum junction temperature
LIMIT 600 ± 30 12 7.
8 27 0.
26 117 33
-55 to +150 70 5 300 0.
6
UNIT V
A
W/°C mJ W °C V/ns °C Nm
S17-1307-Rev.
E, 21-Aug-17
1
Document Number: 91569
For technical questions, contact: hvm@vishay.
com
THIS DOCUMENT IS SUBJECT TO CHANGE...
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