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Si8824EDB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0. 075 at VGS = 4. 5 V
0. 082 at VGS = 2. 5 V
20 0. 090 at VGS = 1. 8 V
0. 125 at VGS = 1. 5 V
0. 175 at VGS = 1. 2 V
ID (A) a 2. 9 2. 7 2. 6 2. 2 1. 5
Qg (TYP. ) 2. 7 nC
MICRO FOOT® 0. 8 x 0. 8 S
S2
xxxxx 3
1 0. 8 mm
1 4G D
Backside View
Bump Side View
0. 8 mm
Marking Code: AM
Ordering Information: Si8824EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® power MOSFET • Ultra small 0. 8 mm x 0. 8 mm outline • Ultra thin 0. 357 mm height • Typical ESD protection 2000 V (HBM) • Material categorization: for definitions of
compliance please see www. vishay. com/doc?99912
APPLICATIONS
• Ultraportable and wearable devices
• Load switch with low voltage drop
• Load switch for 1. 2 V, 1. 5 V, and 1. 8 V
power lines
G
• Small signal and high speed switching
D
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMET...
Si8824EDB PDF File
