Schottky Barrier Diode - ROHM
Description
RB228NS-40
Schottky Barrier Diode
●Outline
VR
40
V
Io
30
A
IFSM
100
A
●Features High reliability Power mold type Cathode common dual type Super Low IR
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
Switching power supply
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
●Structure
Quantity(pcs)
1000
Silicon epitaxial planar
Taping Code
TL
Marking
RB228NS40
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.
5
45
V
Reverse voltage Average rectified forward current Peak forward surge current Junction temperature
VR
Reverse direct voltage
40
V
Io
60Hz half sin waveform，resistive load， Io/2 per diode，Tc=100℃Max.
30
A
IFSM
60Hz half sin waveform， non-repetitive，per diode，Ta=25℃
100
A
Tj
-
150
℃
Storage temperature
Tstg
-
-55 ～ 150
℃
Attention
www.
rohm.
com © 2018- ROHMCo.
, Ltd.
All rights reserved.
1/6
2019/05/27_Rev.
003
RB228NS-40
Data sheet
●Electrical Characteristics Parameter
Forward voltage(1) Reverse current(1)
Note (1) Value per diode
(Tj=25ºC unless otherwise specified)
Symbol
Conditions
VF
IF=15A
IR
VR=40V
Min.
Typ.
Max.
Unit - - 0.
77 V - - 10 μA
●Thermal Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Thermal Resistance (Junction to case)(1) (2)
Per diode Per device
RθJC
-
- 1.
0 ℃/W - 0.
61 ℃/W
Thermal Resistance (Junction to ambient)(1) (3)
Notes (1) Value is guaranteed by design.
RθJA
-
- 55 ℃/W
(2) Transient dual interface measurement (TDIM) method.
(3) Mounted on 50 x 50 x 1.
6mm FR4 board，single-sided copper，35μm thickness，reference footprint.
●Characteristic Curves
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